Doping-level-dependent optical properties of GaN:Mn

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4514-4516

  Gelhausen, O ^a   Malguth, E ^a   Phillips, M R ^a   Goldys, E M ^b   Strassburg, M ^c,e   Hoffmann, A ^c   Graf, T ^d   Gjukic, M ^d   Stutzmann, M ^d  

^a UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^b MACQUARIE UNIVERSITY   (Australia)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d WALTER SCHOTTKY INSTITUT   (Germany)

^e GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL FIELDS; EMISSION BANDS; PSEUDOLOCAL VIBRATIONAL MODES; ROOM TEMPERATURE;

CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; LIGHT ABSORPTION; LIGHT EMISSION; MANGANESE; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; MOLECULAR VIBRATIONS; OPTICAL PROPERTIES; PHONONS; SCANNING ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 3042824548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757641     Document Type: Article

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