Physics-based RF noise modeling of submicron MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 81-84

  Donati, S ^a   Alam, M A ^a   Krisch, K S ^a   Martin, S ^a   Pinto, M R ^a   Vuong, H H ^a   Bonani, F ^a   Ghione, G ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

IMPEDANCE FIELD METHOD; RADIO FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0032254779     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)