Noise Associated with Distributed Resistance of MOSFET Gate Structures in Integrated Circuits

IEEE Transactions on Electron Devices

Volumn 31, Issue 10, 1984, Pages 1505-1509

  Jindal, R P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC DEVICES - GATES;

DISTRIBUTED RESISTANCE; MOSFET GATE STRUCTURES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021501926     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21741     Document Type: Article

References (8)

1. K. K. Thornber, “Resistive-gate-induced thermal noise in IGFET's,” IEEE J. Solid-State Circuits, vol. SC-16, no. 4, pp. 414–415, 1981.
2. H. Nyquist, “Thermal agitation of electric charge in conductors,” Phys. Rev., vol 32, pp. 110–113, 1928.
3. A. G. Jordan and N. A. Jordan, “Theory of noise in metal oxide semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-12, pp. 148–156, 1965.
4. C. T. Sah, S. Y. Wu, and F. H. Hielschler, “The effect of fixed bulk charge on the thermal noise in metal oxide semiconductor transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 410–414, 1966.
5. F. M. Klassen and J. Prins, “Thermal noise of MOS transistors,” Philips Res. Rep., vol. 22, pp. 505–514, 1967.
6. A. van der Ziel, Noise: Sources, Characterization, Measurement. Englewood-Cliffs, NJ: Prentice-Hall, 1970, ch. 5.
7. D. L. Fraser, Jr., G. F. Williams, R. P. Jindal, R. A. Kushner, and B. Owen, “A single chip NMOS preamplifier for optical fiber receivers,” in ISSCC Tech. Dig., pp. 80–81, 1983.
8. L. W. Nagel, “ADVICE for circuit simulation,” presented at the 1980 ISCAS Conf., Houston, TX, Apr. 1980.