The Influence of the Thermal Equilibrium Approximation on the Accuracy of Classical Two-Dimensional Numerical Modeling of Silicon Submicrometer MOS Transistors

IEEE Transactions on Electron Devices

Volumn 35, Issue 5, 1988, Pages 689-697

  Meinerzhagen, Bernd ^a   Engl, Walter L ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - SUBSTRATES; SEMICONDUCTOR DEVICES, MOS - MATHEMATICAL MODELS;

CLASSICAL TWO-DIMENSIONAL NUMERICAL MODELING; ENERGY CONSERVATION EQUATION; SUBSTRATE CURRENT MODELING; THERMAL EQUILIBRIUM APPROXIMATION;

TRANSISTORS;

EID: 0024011306     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2514     Document Type: Article

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