Hot-Electron Effects on Channel Thermal Noise in Fine-Line NMOS Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 33, Issue 9, 1986, Pages 1395-1397

  Jindal, R P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS;

CHANNEL LENGTH; CHANNEL THERMAL NOISE; DRAIN-TO-SOURCE VOLTAGE; HOT-ELECTRON EFFECTS; NMOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022787114     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22680     Document Type: Article

References (10)

1. A. van der Ziel, “Thermal noise in field-effect transistors,” Proc. IRE, vol. 56, p. 1808, 1962.
2. A. G. Jordan and N. A. Jordan, “Theory of noise in metal-oxide semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-12, p. 148, 1965.
3. F. M. Klassen, “On the influence of hot-carrier effects on the thermal noise of field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-17, p. 858, 1970.
4. W. Baechtold, “Noise temperature in silicon in the hot electron region,” IEEE Trans. Electron Devices, vol. ED-18, p. 1186, 1971.
5. K. Takagi and K. Matsumoto, “Noise in silicon and FET's at high electric fields,” Solid-State Electron., vol. 20, no. 1, 1977.
6. K. K. Thornber, “Resistive-gate induced thermal noise in IGFET's,” IEEE J. Solid-State Circuits, vol. SC-16, no. 4, pp. 414–415, 1981.
7. R. P. Jindal, “Noise associated with distributed resistance of MOS-FET gate structures in integrated circuits,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1505–1509, 1984.
8. —, “Noise associated with substrate current in fine-line NMOS field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1047–1052, 1985.
9. —, “Distributed substrate resistance noise in fine-line NMOS field-effect transistors,” IEEE Trans. Electron. Devices, vol. ED-32, pp. 2450–2453, 1985.
10. A. Van der Ziel, Noise: Sources, Characterization, Measurement, ch. 5. Englewood Cliffs, NJ: Prentice-Hall, 1970.