A Mobility Model for Carriers in the MOS Inversion Layer

IEEE Transactions on Electron Devices

Volumn 30, Issue 6, 1983, Pages 658-663

  Yamaguchi, Ken ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

EID: 0020763683     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21185     Document Type: Article

References (16)

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10. K. K. Thornber, “Relation of drift velocity to low-field mobility and high-field saturation velocity,” J. Appl. Phys., vol. 51, no. 4, pp. 2127-2136, Apr. 1980.
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15. J. A. Cooper, Jr. and D. F. Nelson, “Measurement of the high field drift velocity of electrons in inversion layers on silicon,” IEEE Electron Device Lett., vol. EDL-2, no. 7, pp. 171-173, July 1981.
16. D. L. Crook, “Techniques of evaluating long term oxide reliability at wafer level,” in IEDM Tech. Dig., pp. 444-448, Dec. 1978.