Characterization of accumulation layer capacitance for extracting data on high-k gate dielectrics

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1187-1193

  Kar, Samares ^a   Rawat, Surendra ^a   Rakheja, Shaloo ^a   Reddy, Dharmendar ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Capacitance measurements; Dielectric materials; MOS capacitors; MOSFETs; Parameter estimation; Quantization; Semiconductor device measurements; Semiconductor insulator interface

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); MOS CAPACITORS; PARAMETER ESTIMATION; SEMICONDUCTOR DOPING;

QUANTIZATION; SEMICONDUCTOR DEVICE MEASUREMENTS; SEMICONDUCTOR INSULATOR INTERFACE;

MOSFET DEVICES;

EID: 21044441684     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848867     Document Type: Article

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