Self-aligned ultra thin HFO2 CMOS transistors with high quality CVD TaN gate electrode

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 82-83

  Lee, C H ^a   Lee, J J ^a   Bai, W P ^a   Bae, S H ^a   Sim, J H ^a   Lei, X ^a   Clark, R D ^a   Harada, Y ^a   Niwa, M ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; GATES (TRANSISTOR); HOLE MOBILITY; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

GATE ELECTRODES;

CMOS INTEGRATED CIRCUITS;

EID: 0036045606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)