Effect of field dependent trap occupancy on organic thin film transistor characteristics

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5302-5306

  Rashmi, ^a   Balakrishnan, V R ^a   Kapoor, Ashok K ^a   Kumar, Vikram ^a   Jain, S C ^b   Mertens, R ^b   Annapoorni, S ^c  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b IMEC   (Belgium)

^c UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; MATHEMATICAL MODELS;

FIELD DEPENDENT TRAP OCCUPANCY (FDTO);

THIN FILM TRANSISTORS;

EID: 0242304105     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1602949     Document Type: Article

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