메뉴 건너뛰기




Volumn 41, Issue 6, 2005, Pages 817-822

Proposed scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers

Author keywords

GaInAs; GaInNas; Polarization insensitivity; Semiconductor optical amplifiers (SOAs)

Indexed keywords

DIFFERENTIAL EQUATIONS; EIGENVALUES AND EIGENFUNCTIONS; FINITE DIFFERENCE METHOD; HAMILTONIANS; LIGHT POLARIZATION; MATHEMATICAL MODELS; NONLINEAR EQUATIONS; OPTICAL PROPERTIES; PERTURBATION TECHNIQUES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

EID: 20744435490     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.847551     Document Type: Article
Times cited : (20)

References (32)
  • 1
    • 0030079777 scopus 로고    scopus 로고
    • "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance"
    • M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1273-1275
    • Kondow, M.1    Uomi, K.2    Niwa, A.3    Kitatani, T.4    Watahiki, S.5    Yazawa, Y.6
  • 3
    • 0039182453 scopus 로고    scopus 로고
    • "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm"
    • J. B. Heroux, X. Yang, and W. I. Wang, "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm," Appl. Phys. Lett., vol. 75, pp. 2716-2718, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 2716-2718
    • Heroux, J.B.1    Yang, X.2    Wang, W.I.3
  • 5
    • 0037767265 scopus 로고    scopus 로고
    • "Theoretical study of GaInNAs-based semiconductor optical amplifiers"
    • May
    • D. Alexandropoulos and M. J. Adams, "Theoretical study of GaInNAs-based semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 39, no. 5, pp. 647-655, May 2003.
    • (2003) IEEE J. Quantum Electron. , vol.39 , Issue.5 , pp. 647-655
    • Alexandropoulos, D.1    Adams, M.J.2
  • 8
    • 0001275383 scopus 로고
    • "Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure"
    • Mar
    • K. Magari, M. Okamoto, Y. Suzuki, K. Sato, Y. Noguchi, and O. Mikami, "Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure," IEEE J. Quantum Electron., vol. 30, no. 3, pp. 695-702, Mar. 1994.
    • (1994) IEEE J. Quantum Electron. , vol.30 , Issue.3 , pp. 695-702
    • Magari, K.1    Okamoto, M.2    Suzuki, Y.3    Sato, K.4    Noguchi, Y.5    Mikami, O.6
  • 9
    • 0036714052 scopus 로고    scopus 로고
    • "Polarization-insensitive quantum-well semiconductor optical amplifiers"
    • Sep
    • P. Koonath, S. Kim, W. J. Cho, and A. Gopinath, "Polarization-insensitive quantum-well semiconductor optical amplifiers," IEEE J. Quantum Electron., vol. 38, no. 9, pp. 1282-1290, Sep. 2002.
    • (2002) IEEE J. Quantum Electron. , vol.38 , Issue.9 , pp. 1282-1290
    • Koonath, P.1    Kim, S.2    Cho, W.J.3    Gopinath, A.4
  • 10
    • 0029404705 scopus 로고
    • "1.55 μm dual-polarization lasers implemented with compressive and tensile strained quantum wells"
    • Nov
    • A. Mathur and P. D. Dapkus, "1.55 μm dual-polarization lasers implemented with compressive and tensile strained quantum wells," IEEE Photon. Technol. Lett., vol. 7, no. 11, pp. 1243-1245, Nov. 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , Issue.11 , pp. 1243-1245
    • Mathur, A.1    Dapkus, P.D.2
  • 11
    • 0033907119 scopus 로고    scopus 로고
    • "Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells"
    • Jan
    • M. Silver, A. F. Phillips, A. R. Adams, P. D. Greene, and A. J. Collar, "Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells," IEEE J. Quantum Electron., vol. 36, no. 1, pp. 118-122, Jan. 2000.
    • (2000) IEEE J. Quantum Electron. , vol.36 , Issue.1 , pp. 118-122
    • Silver, M.1    Phillips, A.F.2    Adams, A.R.3    Greene, P.D.4    Collar, A.J.5
  • 12
    • 0032163833 scopus 로고    scopus 로고
    • "Polarization-independent delta-strained semiconductor optical amplifiers: A tight-binding study"
    • Sep
    • A. Di Carlo, A. Reale, L. Tocca, and P. Lugli, "Polarization-independent delta-strained semiconductor optical amplifiers: A tight-binding study," IEEE J. Quantum Electron., vol. 34, no. 9, pp. 1730-1739, Sep. 1998.
    • (1998) IEEE J. Quantum Electron. , vol.34 , Issue.9 , pp. 1730-1739
    • Di Carlo, A.1    Reale, A.2    Tocca, L.3    Lugli, P.4
  • 13
    • 0033353953 scopus 로고    scopus 로고
    • "l.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells"
    • Oct
    • Y. M. Zhang and P. P. Ruden, "l.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells," IEEE J. Quantum Electron., vol. 35, no. 10, pp. 1509-1514, Oct. 1999.
    • (1999) IEEE J. Quantum Electron. , vol.35 , Issue.10 , pp. 1509-1514
    • Zhang, Y.M.1    Ruden, P.P.2
  • 16
    • 0037304319 scopus 로고    scopus 로고
    • "Assessment of GaInNAs as a potential laser material"
    • D. Alexandropoulos and M. J. Adams, "Assessment of GaInNAs as a potential laser material," Proc. IEE Optoelectron., vol. 150, pp. 40-44, 2003.
    • (2003) Proc. IEE Optoelectron. , vol.150 , pp. 40-44
    • Alexandropoulos, D.1    Adams, M.J.2
  • 17
    • 0029325407 scopus 로고
    • "Modeling of strained quantum-well lasers with spin-orbit coupling"
    • Jun
    • C. Chang and S. L. Chuang, "Modeling of strained quantum-well lasers with spin-orbit coupling," IEEE J. Sel. Top. Quantum Electron., vol. 1, no. 2, pp. 218-229, Jun. 1995.
    • (1995) IEEE J. Sel. Top. Quantum Electron. , vol.1 , Issue.2 , pp. 218-229
    • Chang, C.1    Chuang, S.L.2
  • 19
    • 0345382577 scopus 로고    scopus 로고
    • "Numerical spurious solutions in the effective mass approximation"
    • X. Cartoixa, D. Z.-Y. Ting, and T. C. McGill, "Numerical spurious solutions in the effective mass approximation," J. Appl. Phys., vol. 93, pp. 3974-3981, 2003.
    • (2003) J. Appl. Phys. , vol.93 , pp. 3974-3981
    • Cartoixa, X.1    Ting, D.Z.-Y.2    McGill, T.C.3
  • 20
    • 0037041125 scopus 로고    scopus 로고
    • "Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum wells"
    • D. Alexandropoulos and M. J. Adams, "Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum wells," J. Phys. Condens. Matter., vol. 14, pp. 3523-3536, 2002.
    • (2002) J. Phys. Condens. Matter. , vol.14 , pp. 3523-3536
    • Alexandropoulos, D.1    Adams, M.J.2
  • 21
    • 0022008847 scopus 로고
    • "Analysis of semiconductor laser optical amplifiers"
    • M. J. Adams, J. V. Collins, and I. D. Henning, "Analysis of semiconductor laser optical amplifiers," Proc. IEE, pt. J132, pp. 58-63, 1985.
    • (1985) Proc. IEE , Issue.PART J132 , pp. 58-63
    • Adams, M.J.1    Collins, J.V.2    Henning, I.D.3
  • 22
    • 0037930788 scopus 로고    scopus 로고
    • "Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum well lasers"
    • D. Alexandropoulos and M. J. Adams, "Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum well lasers," in Proc. IEE Optoelectron., vol. 150, 2003, pp. 105-109.
    • (2003) Proc. IEE Optoelectron. , vol.150 , pp. 105-109
    • Alexandropoulos, D.1    Adams, M.J.2
  • 23
    • 0031343318 scopus 로고    scopus 로고
    • "Strain and strain relaxation in semiconductors"
    • D. J. Dunstan, "Strain and strain relaxation in semiconductors," J. Mater. Sci. Mater., vol. 8, pp. 337-375, 1997.
    • (1997) J Mater Sci. Mater. , vol.8 , pp. 337-375
    • Dunstan, D.J.1
  • 25
    • 2342630644 scopus 로고    scopus 로고
    • "Metamorphic growth for application in long-wavelength (1.3-1.55 μm) lasers and MODFET-type structures on GaAs substrates"
    • E. S. Semenova et al., "Metamorphic growth for application in long-wavelength (1.3-1.55 μm) lasers and MODFET-type structures on GaAs substrates," Nanotechnology, vol. 15, pp. S283-S287, 2004.
    • (2004) Nanotechnology , vol.15
    • Semenova, E.S.1
  • 26
    • 0141749130 scopus 로고    scopus 로고
    • "Metamorphic lasers for 1.3 μm spectral range grown on GaAs substrates by MBE"
    • A. E. Zhukov et al., "Metamorphic lasers for 1.3 μm spectral range grown on GaAs substrates by MBE," Semiconductors, vol. 37, pp. 1119-1122, 2003.
    • (2003) Semiconductors , vol.37 , pp. 1119-1122
    • Zhukov, A.E.1
  • 27
    • 4244029526 scopus 로고    scopus 로고
    • "Continuously graded buffers for InGaAs/GaAs structures grown on GaAs"
    • A. Bosacchi et al., "Continuously graded buffers for InGaAs/ GaAs structures grown on GaAs," J. Cryst. Growth., vol. 175, pp. 1009-1015, 1997.
    • (1997) J. Cryst. Growth. , vol.175 , pp. 1009-1015
    • Bosacchi, A.1
  • 28
    • 0035356466 scopus 로고    scopus 로고
    • "Band parameters for III-V compound semiconductors and their alloys"
    • I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, pp. 5815-5875, 2001.
    • (2001) J. Appl. Phys. , vol.89 , pp. 5815-5875
    • Vurgaftman, I.1    Meyer, J.R.2    Ram-Mohan, L.R.3
  • 29
    • 0000579974 scopus 로고
    • "Optical analysis of multiple quantum well lasers"
    • W. Streifer, D. R. Scifres, and R. D. Burnham, "Optical analysis of multiple quantum well lasers," Appl. Opt., vol. 18, pp. 3547-3548, 1979.
    • (1979) Appl. Opt. , vol.18 , pp. 3547-3548
    • Streifer, W.1    Scifres, D.R.2    Burnham, R.D.3
  • 30
    • 0036662191 scopus 로고    scopus 로고
    • "A quantitative study of radiative, auger and defect related recombination processes in 1.3-μm GaInNAs-based quantum well lasers"
    • Jul./Aug
    • R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. O'Reilly, A. Andreev, and H. Riechert, "A quantitative study of radiative, auger and defect related recombination processes in 1.3-μm GaInNAs-based quantum well lasers," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 801-810, Jul./Aug. 2002.
    • (2002) IEEE J. Sel. Topics Quantum Electron. , vol.8 , Issue.4 , pp. 801-810
    • Fehse, R.1    Tomic, S.2    Adams, A.R.3    Sweeney, S.J.4    O'Reilly, E.P.5    Andreev, A.6    Riechert, H.7
  • 31
    • 0031098737 scopus 로고    scopus 로고
    • "Low noise figure (7.2 dB) and high gain (29 dB) semiconductor optical amplifier with a single layer AR coating"
    • A. E. Kelly, I. F. Lealman, L. J. Rivers, S. D. Perrin, and M. Silver, "Low noise figure (7.2 dB) and high gain (29 dB) semiconductor optical amplifier with a single layer AR coating," Electron. Lett., vol. 33, pp. 536-538, 1997.
    • (1997) Electron. Lett. , vol.33 , pp. 536-538
    • Kelly, A.E.1    Lealman, I.F.2    Rivers, L.J.3    Perrin, S.D.4    Silver, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.