Design considerations for 1.3μm emission of GaInNAs/GaAs strained quantum-well lasers

IEE Proceedings: Optoelectronics

Volumn 150, Issue 2, 2003, Pages 105-109

  Alexandropoulos, D ^a   Adams, M J ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; EIGENVALUES AND EIGENFUNCTIONS; GALLIUM ALLOYS; LIGHT EMISSION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MODELS;

BAND ANTI-CROSSING MODEL; GALLIUM INDIUM NITROGEN ARSENIDE; NITROGEN-INDUCED CONDUCTION BAND NON-PARABOLICITY; VALENCE BAND MIXING EFFECT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0037930788     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030385     Document Type: Article

References (25)

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