Theoretical and Experimental Analysis of 1.3-μm InGaAsN/GaAs Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1228-1238

  Tomić, Stanko ^a,b   O'Reilly, Eoin P ^c   Fehse, Robin ^a   Sweeney, Stephen John ^a   Adams, Alfred R ^a   Andreev, Aleksey D ^a   Choulis, Stelios A ^d   Hosea, Thomas J C ^a   Riechert, Henning ^e  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

^e INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

1.3 m laser emission; Dilute nitride materials; InGaAsN; Optical fiber telecommunications; Semiconductor devices modeling; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRONIC STRUCTURE; ENERGY GAP; HAMILTONIANS; LIGHT EMISSION; MATRIX ALGEBRA; OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; STRAIN;

1.3-ΜM LASER EMISSION; DILUTE NITRIDE MATERIALS; INGAASN; OPTICAL FIBER TELECOMMUNICATIONS; SEMICONDUCTOR DEVICE MODELING;

SEMICONDUCTOR LASERS;

EID: 1342324834     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819516     Document Type: Conference Paper

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