Polarization-insensitive quantum-well semiconductor optical amplifiers

IEEE Journal of Quantum Electronics

Volumn 38, Issue 9, 2002, Pages 1282-1290

  Koonath, Prakash ^b   Kim, Sangin ^c   Cho, Woon Jo ^d   Gopinath, Anand ^a,e  

^a IEEE   (United States)

^b Altra Broadband Inc   (United States)

^c KT Cooperation   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

^e UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Integrated optics; Polarization; Quantum wells; Semiconductor optical amplifier; Tensile strain

Indexed keywords

BANDGAP ENGINEERING; POLARIZATION INSENSITIVITY; TENSILE STRAIN; TRANSVERSE ELECTRIC MODE; WIDE ENERGY SPECTRUM;

BAND STRUCTURE; COMPUTER SIMULATION; ELECTROMAGNETIC WAVE POLARIZATION; GAIN MEASUREMENT; INTEGRATED OPTICS; LIGHT AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS; TENSILE PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036714052     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.802445     Document Type: Article

References (18)

1. Cross-connect switches based on SOA arrays
2. Realization of all optical wavelength converter based on directionally coupled semiconductor optical amplifier
3. 40-Gb/s all-optical wavelength conversion, regeneration and demultiplexing in an SOA-based all-active Mach-Zehnder interferometer
4. All-optical Mach-Zehnder wavelength converter with monolithically integrated preamplifiers
5. 1.55 μm polarization insensitive high gain tensile strained barrier MQW optical amplifier
6. Polarization insensitive optical amplifiers with tensile-barrier MQW structure
7. Polarization insensitive semiconductor laser amplifier with tensile strained InGaAs/InGaAsP multi-quantum well structure
8. Spot-size converter integrated polarization insensitive SOA
9. Wideband polarization independent tensile strained InGaAs MQW-SOA gate
10. Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers
11. Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window
12. Long-wavelength strained quantum-well lasers oscillating up to 210°C on InGaAs ternary substrates
13. High-temperature characteristics of 1.3 μm InAsP-InAlGaAs ridge waveguide lasers
14. Progress in long wavelength strained layer InGaAs(P) quantum well semiconductors and amplifiers
15. Calculating the optical properties of multi-dimensional heterostructures: Application to the modeling of quaternary quantum-well lasers
16. Eigen function expansion method for solving the quantum wire problem: Formulation
17. Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained-layer quantum well lasers