Continuously graded buffers for InGaAs/GaAs structures grown on GaAs

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1009-1015

  Bosacchi, A ^a   De Riccardis, A C ^a   Frigeri, P ^a   Franchi, S ^a   Ferrari, C ^a   Gennari, S ^a   Lazzarini, L ^a   Nasi, L ^a   Salviati, G ^a   Drigo, A V ^b   Romanato, F ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GRADED BUFFERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4244029526     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00961-X     Document Type: Article

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