Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells

IEEE Journal of Quantum Electronics

Volumn 36, Issue 1, 2000, Pages 118-122

  Silver, Mark ^a,b   Phillips, A F ^a,c   Adams, A R ^a   Greene, P D ^d   Collar, A J ^d  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b AGILENT TECHNOLOGIES   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; LIGHT POLARIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS; SPONTANEOUS EMISSION;

AMPLIFIED SPONTANEOUS EMISSION (ASE); COMPRESSIVE WELLS; TENSILE WELLS;

SEMICONDUCTOR LASERS;

EID: 0033907119     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.817647     Document Type: Article

References (8)

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