1.3 μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

Electronics Letters

Volumn 39, Issue 1, 2003, Pages 100-102

  Calvez, S ^a   Clark, A H ^a   Hopkins, J M ^a   Macaluso, R ^a   Merlin, P ^a   Sun, H D ^a   Dawson, M D ^a   Jouhti, T ^b   Pessa, M ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; OPTICAL INTERCONNECTS; OPTICAL PUMPING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH DIVISION MULTIPLEXING;

MULTI QUANTUM WELLS;

LIGHT AMPLIFIERS;

EID: 0037426953     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030119     Document Type: Article

References (6)

1. KARIM, A., BJORLIN, S., PIPREK, J., and BOWERS, J.E.: 'Long-wavelength vertical-cavity lasers and amplifiers', IEEE J. Sel. Top. Quantum Electron., 2000, 6, pp. 1244-1253
2. BJORLIN, E.S., RIOU, B., ABRAHAM, P., CHIU, Y.-J., PIPREK, J., and BOWERS, J.E.: '1.3 μm vertical cavity amplifier', IEEE Photonics Technol. Lett., 2000, 12, p. 951
3. BJORLIN, E.S., ABRAHAM, E, PASQUARIELLO, D., PIPREK, J., CHIU, Y.-J., and BOWERS, J.E.: 'High gain, high efficiency vertical-cavity semiconductor optical amplifiers'. Indium Phosphide and Related Materials Conf.IPRM, 2002, pp. 307-310
4. CALVEZ, S., CLARK, A.H., HOPKINS, J.-M., MACALUSO, R., MERLIN, P., SUN, H.D., DAWSON, M.D., JOUHTI, T., and PESSA, M.: 'Amplification and laser action in diode-pumped 1.3 μm GaInNAs vertical-cavity structures'. LEOS Annual Mtg, Glasgow, 2002, Paper TuC 4.
5. PIPREK, J., BJORLIN, S., and BOWERS, J.E.: 'Design and analysis of vertical-cavity semiconductor optical amplifiers', IEEE J. Quantum Electron., 2001, 37, pp. 127-133
6. FEHSE, R., TOMIC, S., ADAMS, A.R., SWEENEY, S.J., O'REILLY, E.P., ANDREEV, A., and RIECHERT, H.: 'A quantitative study of radiative, auger, and defect related recombination processing 1.3 μm GaInNAs-based quantum-well lasers', IEEE J. Sel. Top. Quantum Electron., 2002, 8, pp. 801-810