1.3 μm traveling-wave GaInNAs semiconductor optical amplifier

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3419-3423

  Hashimoto, Jun Ichi ^a,b   Koyama, Kenji ^a,b   Katsuyama, Tsukuru ^a,b   Iguchi, Yasuhiro ^a,b   Yamada, Takashi ^a,b   Takagishi, Shigenori ^b   Ito, Masashi ^b   Ishida, Akira ^a,b  

^a Optoelectron Indust/Technol DA   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Facet coating; GaAs substrate; GaInNAs; Semiconductor optical amplifier; SOA; Traveling wave

Indexed keywords

BANDWIDTH; COATING TECHNIQUES; DEPOSITION; INTEGRATED CIRCUITS; LIGHT AMPLIFIERS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; TRAVELING WAVE ANTENNAS;

FACET COATINGS; GAAS SUBSTRATES; GAINNAS; SEMICONDUCTOR OPTICAL AMPLIFIER (SOA);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4344601663     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3419     Document Type: Article

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