Electrical characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si structure for metal-ferroelectric-insulator-semiconductor field-effect-transistor application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5645-5649

  Park, Joo Dong ^a   Choi, Jae Hoon ^a   Oh, Tae Sung ^a  

^a Hong Ik University   (South Korea)

Author keywords

Ferroelectric properties; Memory window; MFIS; SBT; Thin film; ZrO2

Indexed keywords

DIFFUSION; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; FERROELECTRIC CERAMICS; SPUTTER DEPOSITION;

MEMORY WINDOWS;

THIN FILM TRANSISTORS;

EID: 0036757333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5645     Document Type: Article

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