Advanced MFIS structure with Al2O3/Si 3N4 stacked buffer layer

Ferroelectrics

Volumn 292, Issue , 2003, Pages 3-13

  Fujisaki, Yoshihisa ^a,b   Ogasawara, Satoru ^a,b   Ishiwara, Hiroshi ^b  

^a RandD Associations for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic Layer Deposition Technique; Ferroelectric Field effect Transistor

Indexed keywords

DEFECTS; FERROELECTRIC THIN FILMS; FIELD EFFECT TRANSISTORS; MOLECULAR ORIENTATION; OXIDATION;

ATOMIC LAYER DEPOSITION TECHNIQUE; BUFFER LAYERS; FERROELECTRIC FIELD-EFFECT TRANSISTOR; FERROELECTRIC FILMS;

MIS DEVICES;

EID: 8644254573     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190390222754     Document Type: Conference Paper

References (9)

1. Y. Fujisaki and H. Ishiwara, Jpn. J. Appl. Phys. 39, L1075 (2000).
2. T. Yamaguchi, M. Koyama, and S. Takagi, Proc. Solid State Dev. Mat. 482 (1999).
3. J. P. Han and T. P. Ma, Appl. Phys. Lett. 72, 1185 (1998).
4. E. Tokumitsu, G. Fujii, and H. Ishiwara, J. Appl. Phys. 75, 575 (1999).
5. P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979).
6. F. B. McLean, IEEE Trans. Nucl. Sci. NS-27, 1651 (1980).
7. J. P. Han and T. P. Ma, Integ. Ferroelectrics 27, 9 (1999).
8. A. Paranjpe, S. Gopinath, T. Omstead, and R. Bubber, J. Electrochem. Soc. 148(9), G465-G471 (2001).
9. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature 401, 682 (1999).