The role of leakge current on the memory window and memory retention in MFIS structure

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 205-211

  Lim, M ^a,b   Kalkur, T S ^a  

^a University of Colorado Colorado Springs   (United States)

^b Symetrix Corporation   (United States)

Author keywords

Memory retention; Memory window; MFIS capacitors

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; YTTRIUM COMPOUNDS;

MEMORY RETENTION; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) STRUCTURE; STRONTIUM BISMUTH TANTALATE; YTTRIA;

FERROELECTRIC DEVICES;

EID: 0032314860     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208042     Document Type: Article

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