Channel width and length dependence in Si nanocrystal memories with ultra-nanoscale channel

IEEE Transactions on Nanotechnology

Volumn 4, Issue 3, 2005, Pages 349-354

  Brault, Julien ^a,b   Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CNRS   (France)

Author keywords

Bottleneck effect (BE); Quantum confinement effect (QCE); Scalability; Si nanocrystal (Si NC) memory; Ultra narrow wire channel

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; OSCILLATIONS; OXIDATION; SILICON; THERMAL EFFECTS;

BOTTLENECK EFFECT (BE); QUANTUM CONFINEMENT EFFECT (QCE); SCALABILITY; SI NANOCRYSTAL (SI-NC) MEMORY; ULTRA-NARROW WIRE CHANNEL;

DATA STORAGE EQUIPMENT;

EID: 20344377889     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.846917     Document Type: Conference Paper

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