Growth of Si nanocrystals on alumina and integration in memory devices

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4151-4153

  Baron, T ^a   Fernandes, A ^a   Damlencourt, J F ^a   De Salvo, B ^a   Martin, F ^a   Mazen, F ^b   Haukka, S ^c  

^a CEA LETI   (France)

^b CNRS   (France)

^c ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DATA STORAGE EQUIPMENT; NUCLEATION; PARTIAL PRESSURE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

PARASITIC CHARGING EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 0038465982     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577409     Document Type: Article

References (17)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chen, and D. Buchanan, Tech. Dig. - Int. Electron Devices Meet. 1995, 521 (1995).
2. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
3. M. L. Ostraat, J. De Blauwe, M. L. Green, L. D. Bell, M. L. Brongersma, J. Caperson, R. C. Flagan, and H. Atwater, Appl. Phys. Lett. 79, 433 (2001).
4. S. Madhukar, K. Smith, R. Muralidhar, D. O'Meara, M. Sadd, B. Y. Nguyen, B. White, and B. Jones, Mater. Res. Soc. Symp. Proc. 638, F5.2.1 (2001).
5. S. Myazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose, Thin Solid Films 369, 55 (2000).
6. I. G. Kim, S. Han, H. Kim, J. Lee, B. Choi, S. Hwang, D. Ahn, and H. Shin, Tech. Dig. - Int. Electron Devices Meet. 1998, 111 (1998).
7. M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk, and M. Poppeller, Appl. Phys. Lett. 78, 2670 (2001).
8. T. Baron, F. Martin, P. Mur, C. Wyon, and M. Dupuy, J. Cryst. Growth 290, 1004 (2000).
9. B. A. Scott, R. M. Plecenick, and E. E. Simonyi, Appl. Phys. Lett. 39, 73 (1981).
10. C. H. J. Van Den Brekel and L. J. M. Bollen, J. Cryst. Growth 54, 310 (1981).
11. H. Imai, T. Watanabe, and T. Suzuki, J. Electrochem. Soc. 142, 3202 (1995).
12. S. Myazaki, Y. Hamamoto, E. Yoshida, M. Ikeda, and M. Hirose, Thin Solid Films 369, 55 (2000).
13. L. T. Zhuravlev, Langmuir 3, 316 (1987).
14. V. Coustet and J. Jupille, Surf. Sci. 307-309, 1161 (1994).
15. B. De Salvo, G. Ghibaudo, G. Pananakakis, P. Massen, T. Baron, N. Buffet, A. Fernandas, and B. Guillaumot, IEEE Trans. Electron Devices 48, 1789 (2001).
16. D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Kim, M. A. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. J. Fleming, P. C. Jamison, J. Brown, and R. Amdt, Tech. Dig. - Int. Electron Devices Meet. 2000, 223 (2000).
17. A. Fernandes, B. De Salvo, P. Masson, G. Pananakakis, G. Ghibaudo, T. Baron, K. Buffet, D. Mariolle, and B. Guillaumot, Proc. ESSDERC 2001.