Room-Temperature Operation of Highly Functional Single-Electron Transistor Logic Based on Quantum Mechanical Effect in Ultra-Small Silicon Dot

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 753-756

  Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ETCHING; MOSFET DEVICES; QUANTUM THEORY; SILICON;

COULOMB BLOCKADE (CB); NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); SINGLE HOLE TRANSISTORS (SHT); SINGLE-ELECTRON TRANSISTOR (SET) LOGIC;

TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

EID: 0842331301     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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