Carbon nanotube technology for solid state and vacuum electronics

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 5, 2004, Pages 443-451

  Teo, K B K ^a   Lacerda, R G ^a,b   Yang, M H ^a   Teh, A S ^a   Robinson, L A W ^a   Dalal, S H ^a   Rupesinghe, N L ^a   Chhowalla, M ^a,c   Lee, S B ^a,d   Jefferson, D A ^a   Hasko, D G ^a   Amaratunga, G A J ^a   Milne, W L ^a   Legagneux, P ^e   Gangloff, L ^e   Minoux, E ^e   Schnell, J P ^e   Pribat, D ^e,f  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^c RUTGERS UNIVERSITY   (United States)

^d Hanyang University   (South Korea)

^e THALES RESEARCH AND TECHNOLOGY   (France)

^f ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON EMISSION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); NANOTECHNOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SOLID STATE DEVICES; SUBSTRATES; VACUUM APPLICATIONS;

CARBON NANOTUBE TECHNOLOGY; FIELD EMITTERS; MULTIWALL CARBON NANOTUBES; SINGLE WALL CARBON NANOTUBES; VACUUM ELECTRONIC DEVICES;

CARBON NANOTUBES;

EID: 19944422726     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20040408     Document Type: Article

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