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Volumn 2, Issue 10, 2002, Pages 1137-1141

Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes

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Indexed keywords


EID: 0037798895     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl025642u     Document Type: Article
Times cited : (239)

References (29)
  • 16
    • 0348053361 scopus 로고    scopus 로고
    • note
    • 3/min. The electrodes were placed parallel to the gas flow, to rule out any possible influence of the flow on the direction of nanotube growth. While applying the voltage, the resistance was monitored and ensured to be always within a range of 1-10 MΩ, to avoid accidental electrical leakages, breakdowns, or disconnections.
  • 17
    • 0346792380 scopus 로고    scopus 로고
    • note
    • 3 layer (5 nm) was evaporated on the silicon oxide areas exposed through the PMMA, the substrates were dipped in a 1 mg/L ferritin solution, rinsed with water, and blow-dried, then the PMMA was lifted off in 1,2-dichloroethane, and the substrates were cleaned in oxygen plasma. Nanoparticle sizes were determined by atomic force microscopy (AFM).
  • 19
    • 0346792381 scopus 로고    scopus 로고
    • note
    • Scanning electron microscopy (SEM) images were obtained with a field-emission SEM (LEO 982), operated at 1 kV with an in-lens detector.
  • 26
    • 0347422857 scopus 로고    scopus 로고
    • note
    • AFM topographic images were acquired in tapping mode with a Nanoscope IIIa (Digital Instruments, Santa Barbara, CA), using nominal 70 kHz silicon probes.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.