Fabrication of self-aligned side gates to carbon nanotubes

Nanotechnology

Volumn 14, Issue 2, 2003, Pages 290-293

  Robinson, L A W ^a   Lee, S B ^a   Teo, K B K ^b   Chhowalla, M ^b   Amaratunga, G A J ^b   Milne, W I ^b   Williams, D A ^c   Hasko, D G ^a   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MASKS; SUBSTRATES;

MULTIWALLED CARBON NANOTUBES; NANOELECTRICAL MECHANICAL SYSTEM; SELF ALIGNED SIDE GATES;

CARBON NANOTUBES;

EID: 0037293871     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/2/336     Document Type: Article

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