Carbon nanotube electron emitters with a gated structure using backside exposure processes

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 4045-4047

  Chung, Deuk Seok ^a   Park, S H ^a   Lee, H W ^a   Choi, J H ^a   Cha, S N ^a   Kim, J W ^a   Jang, J E ^a   Min, K W ^a   Cho, S H ^a   Yoon, M J ^a   Lee, J S ^a   Lee, C K ^a   Yoo, J H ^a   Kim, Jong Min ^a   Jung, J E ^b   Jin, Y W ^b   Park, Y J ^b   You, J B ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSIDE EXPOSURE; CARBON NANOTUBE PASTE; EMISSION CHARACTERISTICS; GATE ELECTRODES; GATE STRUCTURE; GATED STRUCTURES; NANOTUBE ELECTRON EMITTERS; SELF-ALIGNED; SINGLE-WALLED CARBON;

CARBON; FIELD EMISSION DISPLAYS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 79956023354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480104     Document Type: Article

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