-
2
-
-
0002250337
-
A hydrogen-sensitive MOS field-effect transistor
-
K. I. Lundström, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field-effect transistor," Appl. Phys. Lett. 26, 55-57 (1975).
-
(1975)
Appl. Phys. Lett.
, vol.26
, pp. 55-57
-
-
Lundström, K.I.1
Shivaraman, S.2
Svensson, C.3
Lundkvist, L.4
-
3
-
-
0016556950
-
A hydrogen-sensitive Pd-gate MOS transistor
-
K. I. Lundström, S. Shivaraman, and C. Svensson, "A hydrogen-sensitive Pd-gate MOS transistor," J. Appl. Phys. 46, 3876 (1975).
-
(1975)
J. Appl. Phys.
, vol.46
, pp. 3876
-
-
Lundström, K.I.1
Shivaraman, S.2
Svensson, C.3
-
4
-
-
8544226209
-
Gas-sensitive metal gate semiconductor devices
-
S. Janata and R. J. Huber, Eds. New York: Academic Press
-
K. I. Lundström and C. Svensson, "Gas-sensitive metal gate semiconductor devices," in Solid State chemical sensors, S. Janata and R. J. Huber, Eds. (New York: Academic Press, 1985), p. 1.
-
(1985)
Solid State Chemical Sensors
, pp. 1
-
-
Lundström, K.I.1
Svensson, C.2
-
8
-
-
0030127549
-
2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device
-
2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device," Surf. Sci. 350, 91 (1996).
-
(1996)
Surf. Sci.
, vol.350
, pp. 91
-
-
Fogelberg, J.1
Petersson, L.-G.2
-
9
-
-
0021410665
-
The influence of different insulators, on palladium-gate metal-insulator-semiconductor hydrogen sensors
-
K. Dobos, M. Armgarth, G. Zimmer, and I. Lundström, "The influence of different insulators, on palladium-gate metal-insulator- semiconductor hydrogen sensors," IEEE Trans. on Electron Devices 31, 508 (1984).
-
(1984)
IEEE Trans. on Electron Devices
, vol.31
, pp. 508
-
-
Dobos, K.1
Armgarth, M.2
Zimmer, G.3
Lundström, I.4
-
12
-
-
0027647550
-
Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
-
A. Arbab, A. Spetz, and I. Lundström, "Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices," Sensors and Actuators B 15-16, 19 (1993).
-
(1993)
Sensors and Actuators B
, vol.15-16
, pp. 19
-
-
Arbab, A.1
Spetz, A.2
Lundström, I.3
-
13
-
-
0031145894
-
2/SiC Schottky diode sensors
-
2/SiC Schottky diode sensors," J. Vac. Sci. Tech. A 15, 1228 (1997).
-
(1997)
J. Vac. Sci. Tech. A
, vol.15
, pp. 1228
-
-
Chen, L.Y.1
Hunter, G.W.2
Neudeck, P.G.3
Bansal, G.4
Petit, J.B.5
Knight, D.6
-
14
-
-
0029309683
-
Gas sensitive field effect devices for high temperatures
-
A. Baranzahi, A. L. Spetz, B. Anderson, and I. Lundström, "Gas sensitive field effect devices for high temperatures," Sensors and Actuators B 26-27, 165 (1996).
-
(1996)
Sensors and Actuators B
, vol.26-27
, pp. 165
-
-
Baranzahi, A.1
Spetz, A.L.2
Anderson, B.3
Lundström, I.4
-
15
-
-
0028549016
-
Modified heterojunction based on zinc oxide thin film for hydrogen gas-sensor application
-
S. Basu and A. Dutta, "Modified heterojunction based on zinc oxide thin film for hydrogen gas-sensor application," Sensors and Actuators B 22, 83 (1994).
-
(1994)
Sensors and Actuators B
, vol.22
, pp. 83
-
-
Basu, S.1
Dutta, A.2
-
16
-
-
0028416611
-
Reactions of hydrogen at the interface of palladium-titanium dioxide Schottky diodes as hydrogen sensors, studied by work function and electrical characteristic measurement
-
H. Kobayashi, K. Kishimoto, and Y. Nakato, "Reactions of hydrogen at the interface of palladium-titanium dioxide Schottky diodes as hydrogen sensors, studied by work function and electrical characteristic measurement," Surf. Sci. 306, 393 (1994).
-
(1994)
Surf. Sci.
, vol.306
, pp. 393
-
-
Kobayashi, H.1
Kishimoto, K.2
Nakato, Y.3
-
17
-
-
33845301707
-
Comparison and analysis of Pd- And Pt-GaAs Schottky diodes for hydrogen detection
-
W. P. Kang and Y. Gürbüz, "Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection," J. Appl. Phys. 75, 8175 (1994).
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 8175
-
-
Kang, W.P.1
Gürbüz, Y.2
-
18
-
-
0029290616
-
A polycrystalline diamond thin-film-based hydrogen sensor
-
W. P. Kong, Y. Gurbuz, J. L. Davidson, and D. V. Kerns, "A polycrystalline diamond thin-film-based hydrogen sensor," Sensors and Actuators B 24-25, 421 (1995).
-
(1995)
Sensors and Actuators B
, vol.24-25
, pp. 421
-
-
Kong, W.P.1
Gurbuz, Y.2
Davidson, J.L.3
Kerns, D.V.4
-
19
-
-
0042138204
-
Diamond microelectronic gas sensors
-
Y. Gurbuz, W. P. Kang, J. L. Davidson, D. L. Kinser, and D. V. Kerns, "Diamond microelectronic gas sensors," Sensors and Actuators B 33 100 (1996).
-
(1996)
Sensors and Actuators B
, vol.33
, pp. 100
-
-
Gurbuz, Y.1
Kang, W.P.2
Davidson, J.L.3
Kinser, D.L.4
Kerns, D.V.5
-
22
-
-
0035876346
-
Amorphous ferroelectric PZT thin film hydrogen gas sensor
-
J. Deng, W. Zhu, and O. K. Tan, "Amorphous ferroelectric PZT thin film hydrogen gas sensor," Sensors and Actuators B 77, 416 (2001).
-
(2001)
Sensors and Actuators B
, vol.77
, pp. 416
-
-
Deng, J.1
Zhu, W.2
Tan, O.K.3
-
30
-
-
0001455161
-
3/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy
-
3/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy," J. Appl. Phys. 85, 7874-7878 (1999).
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 7874-7878
-
-
Ikarashi, N.1
Hosoi, N.2
-
31
-
-
0033689676
-
3/Ru capacitors degraded by forming gas annealing
-
3/Ru capacitors degraded by forming gas annealing," Jpn. J. Appl. Phys. 39, 2063 (2000).
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
, pp. 2063
-
-
Iizuka, T.1
Arita, K.2
Yamamoto, I.3
Yamamichi, S.4
Yamaguchi, H.5
Matsuki, T.6
Sone, S.7
Yabuta, H.8
Miyasaka, Y.9
Kato, Y.10
-
35
-
-
0001270208
-
3 capacitor annealed in the forming gas with and without oxygen addition
-
3 capacitor annealed in the forming gas with and without oxygen addition," Appl. Phys. Lett. 76, 2430 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2430
-
-
Lin, J.1
Natori, K.2
Fukuzumi, Y.3
Izuha, M.4
Tsunoda, K.5
Eguchi, K.6
Hieda, K.7
Matsunaga, D.8
-
36
-
-
0001727540
-
9based ferroelectric memories
-
9based ferroelectric memories," Appl. Phys. Lett. 77, 1372 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1372
-
-
Yang, B.1
Suh, C.W.2
Lee, C.G.3
Kang, E.Y.4
Kang, Y.M.5
Lee, S.S.6
Hong, S.K.7
Kang, N.S.8
Yang, J.M.9
-
37
-
-
0032615123
-
9 thin films by hydrogen annealing and its recovery by postannealing
-
9 thin films by hydrogen annealing and its recovery by postannealing. Appl. Phys. Lett. 75, 558 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 558
-
-
Kwon, O.S.1
Hwang, C.S.2
Hong, S.K.3
-
38
-
-
0001573820
-
9 ferroelectric film-based capacitors
-
9 ferroelectric film-based capacitors," Appl. Phys. Lett. 74, 1162 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1162
-
-
Im, J.1
Auciello, O.2
Krauss, A.R.3
Gruen, D.M.4
Chang, R.P.H.5
Kim, S.H.6
Kingon, A.I.7
-
40
-
-
0001289642
-
Transmission electron microscopy study of hydrogen-induced degradation strontium bismuth tanalate thin films
-
N. Poonawala, V. P. Dravid, O. Auciello, J. Im, and A. R. Krauss, "Transmission electron microscopy study of hydrogen-induced degradation strontium bismuth tanalate thin films," J. Appl. Phys. 87, 2227 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 2227
-
-
Poonawala, N.1
Dravid, V.P.2
Auciello, O.3
Im, J.4
Krauss, A.R.5
-
41
-
-
0001429422
-
3 capacitors
-
3 capacitors," Appl. Phys. Lett. 76, 918 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 918
-
-
Aggarwal, S.1
Perusse, S.R.2
Kerr, C.J.3
Ramesh, R.4
Romero, D.B.5
Evans, J.T.6
Boyer, L.7
Velasquez, G.8
-
44
-
-
0005018742
-
-
S. M. Sze, Ed., 2nd ed. New York: McGraw-Hill
-
L. E. Katz, in VLSI Technology, S. M. Sze, Ed., 2nd ed. New York: McGraw-Hill, 1988, pp. 127.
-
(1988)
VLSI Technology
, pp. 127
-
-
Katz, L.E.1
-
48
-
-
0031377916
-
Top electrode dependence of forming gas annealing effects on ferroelectric films
-
J. P. Han and T. P. Ma, "Top electrode dependence of forming gas annealing effects on ferroelectric films," Integ. Ferroelectrics 17, 471 (1997).
-
(1997)
Integ. Ferroelectrics
, vol.17
, pp. 471
-
-
Han, J.P.1
Ma, T.P.2
-
49
-
-
0001599286
-
3-based ferroelectric capacitors
-
3-based ferroelectric capacitors," Appl. Phys. Lett. 73, 1973 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1973
-
-
Aggarwal, S.1
Perusse, S.R.2
Tipton, C.W.3
Ramesh, R.4
Drew, H.D.5
Venkatesan, T.6
Romero, D.B.7
Podobedov, V.B.8
Weber, A.9
-
51
-
-
0001742307
-
3 films
-
3 films," Appl. Phys. Lett. 77, 1378 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1378
-
-
Ahn, J.H.1
McIntyre, P.C.2
Mirkarimi, L.W.3
Gilbert, S.R.4
Amano, J.5
Schulberg, M.6
-
52
-
-
0000709218
-
3+z/Pt thin film capacitors
-
3+z/Pt thin film capacitors," J. Appl. Phys. 89, 2873 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 2873
-
-
Baniecki, J.D.1
Laibowitz, R.D.2
Shaw, T.M.3
Parks, C.4
Lian, J.5
Xu, H.6
Ma, Q.Y.7
-
57
-
-
0037980531
-
3 thin film by RF multitarget co-sputtering and hydrogen gas sensing properties
-
3 thin film by RF multitarget co-sputtering and hydrogen gas sensing properties," Ferroelectrics 232, 71 (1999).
-
(1999)
Ferroelectrics
, vol.232
, pp. 71
-
-
Chen, X.F.1
Zhu, W.G.2
Tan, O.K.3
Tse, M.S.4
-
59
-
-
33751293573
-
Ferroelectric thin films for hydrogen gas sensor
-
Singapore: Nanyang Tech. Univ.
-
J. Deng, "Ferroelectric thin films for hydrogen gas sensor," in School of EEE. (Singapore: Nanyang Tech. Univ., 2001).
-
(2001)
School of EEE.
-
-
Deng, J.1
-
61
-
-
0001013090
-
3 single crystal and thin film prepared on MgO substrate
-
3 single crystal and thin film prepared on MgO substrate," J. Appl. Phys. 84, 452 (1998).
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 452
-
-
Yuzyuk, Y.I.1
Farhi, R.2
Lorman, V.L.3
Rabkin, L.M.4
Sapozhnikov, L.A.5
Sviridov, E.V.6
Zakharchenko, I.N.7
-
62
-
-
0000944711
-
3 thin films deposited by metallo-organic decomposition technology
-
3 thin films deposited by metallo-organic decomposition technology," J. Appl. Phys. 79, 4283 (1996).
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 4283
-
-
Zhu, W.1
Liu, Z.Q.2
Lu, W.3
Tse, M.S.4
Tan, H.S.5
Yao, X.6
-
66
-
-
0034211131
-
3 thin films for novel metal-ferroelectric-metal type hydrogen gas sensors
-
3 thin films for novel metal-ferroelectric-metal type hydrogen gas sensors," J. Mater. Res. 15, 1291 (2000).
-
(2000)
J. Mater. Res.
, vol.15
, pp. 1291
-
-
Zhu, W.G.1
Tan, O.K.2
Deng, J.3
Oh, J.T.4
-
67
-
-
85077949817
-
SPM studies on surface charge and local piezo-response of ferroelectric thin films
-
accepted
-
X. F. Chen, W. G. Zhu, W. G. Liu, O. K. Tan, and X. Yao, "SPM studies on surface charge and local piezo-response of ferroelectric thin films," Ferroelectrics, accepted.
-
Ferroelectrics
-
-
Chen, X.F.1
Zhu, W.G.2
Liu, W.G.3
Tan, O.K.4
Yao, X.5
-
68
-
-
0030171332
-
Solution deposition of ferroelectric thin films
-
B. A. Tuttle and R. W. Schwartz, "Solution deposition of ferroelectric thin films," MRS Bulletin 21, 49 (1996).
-
(1996)
MRS Bulletin
, vol.21
, pp. 49
-
-
Tuttle, B.A.1
Schwartz, R.W.2
-
69
-
-
0028514290
-
3 thin film I, role of Pb-rich intermediate phase
-
3 thin film I, role of Pb-rich intermediate phase," J. Am. Ceram. Soc. 77, 2332 (1993).
-
(1993)
J. Am. Ceram. Soc.
, vol.77
, pp. 2332
-
-
Chen, S.Y.1
Chen, I.W.2
-
70
-
-
0028514359
-
3 thin film II, heat treatment and compositional effect
-
3 thin film II, heat treatment and compositional effect," J. Am. Ceram. Soc. 77, 2337 (1993).
-
(1993)
J. Am. Ceram. Soc.
, vol.77
, pp. 2337
-
-
Chen, S.Y.1
Chen, I.W.2
-
71
-
-
0033614221
-
Hydrogen-sensitive I-V characteristics of metal-ferroelectric gas sensor device fabricated by sol-gel technique
-
O. K. Tan, W. G. Zhu, M. S. Tse, and X. Yao, "Hydrogen-sensitive I-V characteristics of metal-ferroelectric gas sensor device fabricated by sol-gel technique," Mater. Sci. Eng. 358, 221 (1999).
-
(1999)
Mater. Sci. Eng.
, vol.358
, pp. 221
-
-
Tan, O.K.1
Zhu, W.G.2
Tse, M.S.3
Yao, X.4
-
72
-
-
0001832262
-
The physics of ferroelectric ceramic thin films for memory applications
-
J. F. Scott, "The physics of ferroelectric ceramic thin films for memory applications," Ferroelectric Rev. 1, 1 (1998).
-
(1998)
Ferroelectric Rev.
, vol.1
, pp. 1
-
-
Scott, J.F.1
-
77
-
-
21544465649
-
Quantitative measurement of space-charge effects in lead zirconate-titanate memories
-
J. F. Scott, C. A. Araujo, B. M. Melnick, L. D. Mcmillan, and R. Zuleeg, "Quantitative measurement of space-charge effects in lead zirconate-titanate memories," J. Appl. Phys. 70, 382 (1991).
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 382
-
-
Scott, J.F.1
Araujo, C.A.2
Melnick, B.M.3
Mcmillan, L.D.4
Zuleeg, R.5
-
79
-
-
0032734307
-
Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process
-
S. M. Cho and D. Y. Jeon, "Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process," Thin Solid Films 338, 149 (1999).
-
(1999)
Thin Solid Films
, vol.338
, pp. 149
-
-
Cho, S.M.1
Jeon, D.Y.2
-
80
-
-
0242647876
-
Nonlinear electrical properties of lead-lanthanum-titanate thin films deposited by multi-ion-beam reactive sputtering
-
G. R. Fox and S. B. Krupanidhi, "Nonlinear electrical properties of lead-lanthanum-titanate thin films deposited by multi-ion-beam reactive sputtering," J. Appl. Phys. 74, 1949 (1993).
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 1949
-
-
Fox, G.R.1
Krupanidhi, S.B.2
-
81
-
-
4043057165
-
Investigation of influence of hydrogen gas on Pd/BST/Pt device by impedance spectroscopy
-
submitted
-
J. Deng, O. K. Tan, W. G. Zhu, X. F. Chen, and X. Yao, "Investigation of influence of hydrogen gas on Pd/BST/Pt device by impedance spectroscopy," IEEE Trans. on Ultrasonics, Ferroelectrics and Frequency Control, submitted.
-
IEEE Trans. on Ultrasonics, Ferroelectrics and Frequency Control
-
-
Deng, J.1
Tan, O.K.2
Zhu, W.G.3
Chen, X.F.4
Yao, X.5
-
84
-
-
0344633112
-
Characteristics of Pd/BST/Pt for hydrogen detection at different ambient
-
J. Deng, W. G. Zhu, O. K. Tan, X. F. Chen, and X. Yao, "Characteristics of Pd/BST/Pt for hydrogen detection at different ambient," Ferroelectrics 263, 181 (2001).
-
(2001)
Ferroelectrics
, vol.263
, pp. 181
-
-
Deng, J.1
Zhu, W.G.2
Tan, O.K.3
Chen, X.F.4
Yao, X.5
|