LOW temperature recovery of Ru/(Ba,Sr)TiO3/Ru capacitors degraded by forming gas annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2063-2067

  Iizuka, Toshihiro ^a   Arita, Koji ^a   Yamamoto, Ichiro ^a   Yamamichi, Shintaro ^a   Yamaguchi, Hiromu ^a   Matsuki, Takeo ^a   Sone, Shuji ^a   Yabuta, Hisato ^a   Miyasaka, Yoichi ^a   Kato, Yoshitake ^a,b  

^a NEC CORPORATION   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

(Ba,Sr)TiO3; DRAM; Forming gas annealing; Low temperature; Post annealing; Ru electrode; Thin film capacitor

Indexed keywords

ANNEALING; CAPACITORS; DEGRADATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; MOSFET DEVICES;

FORMING GAS ANNEALING; POST ANNEALING; THIN FILM CAPACITOR;

THIN FILM DEVICES;

EID: 0033689676     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2063     Document Type: Article

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