Pt/PbZrxTi1-xO3 interfacial reaction and Schottky barrier formation studied by x-ray photoelectron spectroscopy: Effect of H2 and O2 annealing

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7784-7791

  Takatani, Shinichiro ^a   Miki, Hiroshi ^a   Kushida Abdelghafar, Keiko ^a   Torii, Kazuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001560476     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370585     Document Type: Article

References (22)

1. N. Tanabe et al., 1995 Symposium on VLSI Technology Digest of Technical Papers (1995), p. 123.
2. S. Ohnishi, K. Hamada, K. Ishihara, Y. Ito, S. Yokoyama, J. Kudo, and K. Sakiyama, Proceedings of the 1994 International Electron Device Meeting (1994), p. 843.
3. R. Moazzami, P. D. Maniar, R. E. Jones, Jr., A. C. Campbell, and C. J. Mogab, Proceedings of the 1992 International Electron Device Meeting (1992), p. 973.
4. S. M. Mukhopadhyay and T. C. S. Chen, J. Phys. D: Appl. Phys. 28, 2170 (1995).
5. T. Fujisaki, K. Kushida-Abdelghafar, Y. Shimamoto, and H. Miki, J. Appl. Phys. 82, 341 (1997).
6. H. Miki, K. Kushida-Abdelghafar, K. Torii, and Y. Fujisaki, Jpn. J. Appl. Phys., Part 1 36, 1132 (1997).
7. K. Kushida-Abdelghafar, H. Miki, K. Torii, and Y. Fujisaki, Appl. Phys. Lett. 69, 3188 (1996).
8. S. Takatani, K. Kushida-Abdelghafar, and H. Miki, Jpn. J. Appl. Phys., Part 2 36, L435 (1997).
9. K. Torii, S. Saito, and Y. Ohji, Jpn. J. Appl. Phys., Part 1 33, 5287 (1994).
10. Y. Fujisaki, K. Torii, M. Hiratani, and K. Kushida-Abdelghafar, Appl. Surf. Sci. 108, 365 (1997).
11. J. A. Taylor and D. L. Perry, J. Vac. Sci. Technol. A 2, 771 (1984).
12. P. Skeath, I. Lindau, P. W. Chye, C. Y Su, and W. E. Spicer, J. Vac. Sci. Technol. 16, 1143 (1979).
13. F. Pesty, H.-P. Steinruck, and T. E. Madey, Surf. Sci. 339, 83 (1995).
14. 2 annealing was 0.3-0.7 eV. The different energy shift observed in this study was probably due to variation between samples. The data presented in this article was obtained from a sample with a PZT layer thicker than that used in our previous report.
15. K. Christmann, G. Ertl, and T. Pignet, Surf. Sci. 54, 365 (1976).
16. A. J. Robell, E. V. Ballou, and M. Bourdart, J. Phys. Chem. 68, 2748 (1964).
17. G. R. Wilson and W. K. Hall, J. Catal. 24, 306 (1972).
18. J. L. Gland, Surf. Sci. 93, 487 (1980).
19. J. Robertson, W. L. Warren, and B. A. Tuttle, J. Appl. Phys. 77, 3975 (1995).
20. T. Kala, Phase Transit. 36, 65 (1991).
21. W. E. Spicer et al., J. Vac. Sci. Technol. B 6, 1245 (1988).
22. C. Sudhama, A. C. Campbell, P. D. Maniar, R. E. Jones, R. Moazzami, C. J. Mogab, and J. C. Lee, J. Appl. Phys. 75, 1014 (1994).