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Volumn 92, Issue 8, 2002, Pages 4784-4790

Stoichiometry control during deposition by ion beam sputtering

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION CHAMBERS; EXPERIMENTAL DATA; FEEDBACK PARAMETERS; HIGH QUALITY; INCIDENT BEAMS; ION-BEAM SPUTTERING; IONIC EMISSION; NONSTOICHIOMETRIC; SPECIFIC RESISTANCES; SPUTTERING RATE; STOICHIOMETRY CONTROL; TERNARY COMPOUNDS;

EID: 18744396341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502916     Document Type: Article
Times cited : (7)

References (52)
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  • 29
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    • tsf THSFAP 0040-6090
    • G. Carter, Thin Solid Films 289, 121 (1996). tsf THSFAP 0040-6090
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    • Carter, G.1
  • 30
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    • G. Carter, J. Phys. D 27, 1046 (1994). jpd JPAPBE 0022-3727
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    • Carter, G.1
  • 46
    • 0002763347 scopus 로고
    • oxm OXMEAF 0030-770X
    • P. Kofstad, Oxid. Met. 44, 3 (1995). oxm OXMEAF 0030-770X
    • (1995) Oxid. Met. , vol.44 , pp. 3
    • Kofstad, P.1
  • 47
    • 0343154019 scopus 로고
    • jaJAPIAU 0021-8979
    • J. D. Klein and A. Yen, J. Appl. Phys. 70, 505 (1991). jap JAPIAU 0021-8979
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    • Klein, J.D.1    Yen, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.