Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 2, 2001, Pages 410-413

  Whangbo, S W ^a   Choi, Y K ^a   Chung, K B ^a   Jang, H K ^a   Whang, C N ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; IONIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; STACKING FAULTS; STOICHIOMETRY; SUBSTRATES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

IONIZED BEAM DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0035271905     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1349730     Document Type: Article

References (12)