Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2247-2252

  Berg, Jonas ^a   Bengtsson, Stefan ^a   Lundgren, Per ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS;

RESONANT TUNNELING DIODES (RTD); SOFTWARE PACKAGE PSPICE;

TUNNEL DIODES;

EID: 0034514388     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00204-5     Document Type: Article

References (19)

1. Van der Wagt P, Seabaugh A, Beam E. RTD/HFET low standby power SRAM gain cell. Int Electron Dev Meeting 1996. p. 425-8.
2. The International Technology Roadmap for Semiconductors, 1999 [www.itrs.net/ntrs/publntrs.nsf].
3. Comfort JH. DRAM Technology: outlook and challenges. IEEE VLSI and CAD symposium, 1999. p. 182-6.
4. Mathews R.H., Sage J.P., Sollner T.C.L.G., Calawa S.D., Chen C.-.L., Mahoney L.J., Maki P.A., Molvar K.M. A new RTD-FET logic family. Proc IEEE. 87(4):1999;596-605.
5. Chen J., Reed M.A., Rawlett A.M., Tour J.M. Large on-off ratios and negative differential resistance in a molecular electronic device. Science. 286:1999;1550-1552.
6. Wei S.J., Lin H.C. Multivalued SRAM cell using resonant tunneling diodes. IEEE J Sol State Circ. 27(2):1992;212-216.
7. Chang C.E., Asbeck P.M., Wang K.-.C., Brown E.R. Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications. IEEE Trans El Dev. 40(4):1993;685-691.
8. Maezawa K. Analysis of switching time of monostable-bistable transition logic elements based on simple model calculation. Jpn J Appl Phys. 34:1995;1213-1217.
9. Yan Z., Deen M.J. New RTD large-signal DC model suitable for PSPICE. IEEE Trans CAD Integ Circ Syst. 14(2):1995;167-172.
10. Schulman J.N., De Los Santos H.J., Chow D.H. Physics-based RTD current-voltage equation. IEEE El Dev Lett. 17(5):1996;220-222.
11. Broekaert T.P.E., Brar B., van der Wagt J.P.A., Seabaugh A.C., Morris F.J., Moise T.S., Beam E.A., Frazier G.A. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter. IEEE J Sol State Circ. 33(9):1998;1342-1349.
12. Shieh M.-.H., Lin H.C. Modeling hysteric current-voltage characteristics for resonant tunneling diodes. IEEE Trans CAD Integ Circ Syst. 14(9):1995;1098-1103.
13. Van der Wagt J.P.A. Tunneling-based SRAM. Proc IEEE. 87(4):1999;571-595.
14. Rommel S.L., Dillon T.E., Dashiell M.W., Feng H., Kolodzey J., Berger P.R., Thompson P.E., Hobart K.D., Lake R., Seabaugh A.C., Klimeck G., Blanks D.K. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes. Appl Phys Lett. 73(15):1998;2191-2193.
15. Reed M.A. Molecular scale electronics. Proc IEEE. 87(4):1999;652-658.
16. Kim S.-.H., Markovich G., Rezvani S., Choi S.H., Wang K.L., Heath J.R. Tunnel diodes fabricated from CdSe nanocrystal monolayers. Appl Phys Lett. 74(2):1999;317-319.
17. Jones L., Schumm J.S., Tour J.M. Rapid solution and solid phase syntheses of oligo(1,4.phenylene-ethynylene)s with thioester termini: molecular scale wires with alligator clips. Derivation of iterative reaction effeciencies on a polymer support. J Organ Chem. 62(5):1997;1388-1390.
18. Gentile SP. Basic theory and application of tunnel diodes. Princeton: D. van Nostrand, 1962.
19. Jogai B., Koenig E.T. A parametric study of extrinsic bistability in the current-voltage curves of resonant-tunneling diodes. J Appl Phys. 69(5):1991;3381-3383.