Charge transfer control by gate voltage in crossed nanotube junction

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2250-2252

  Yoneya, Nobuhide ^a,b   Tsukagoshi, Kazuhito ^a   Aoyagi, Yoshinobu ^a,b,c  

^a RIKEN   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER CONTROL; COULOMB POTENTIAL; CYCLIC SCANS; FLOATING NODES; GATE VOLTAGES; NANOTUBE JUNCTIONS; RESISTANCE CHANGE; SOURCE-DRAIN CURRENT;

CHARGE TRANSFER; DRAIN CURRENT; ELECTRIC FIELDS; FLASH MEMORY; HYSTERESIS; HYSTERESIS LOOPS;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 79955997723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508160     Document Type: Article

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