Self-aligned silicon-on-insulator nano flash memory device

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2259-2264

  Tang, X ^a   Baie, X ^a   Colinge, J P ^b   Crahay, A ^a   Katschmarsyj, B ^a   Scheuren, V ^a   Spote D ^a   Reckinger, N ^a   Van De Wiele, F ^a   Bayot, V ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DATA STORAGE EQUIPMENT; ELECTRON BEAM LITHOGRAPHY; EMBEDDED SYSTEMS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION; THRESHOLD VOLTAGE;

DOPING-ENHANCED OXIDATION RATES; SELF-ALIGNED NANO-FLASH MEMORY DEVICES;

MOSFET DEVICES;

EID: 0034499173     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00221-5     Document Type: Article

References (8)

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