Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1804-1806

  Nakada, N ^a   Nakaji, M ^a   Ishikawa, H ^a   Egawa, T ^a   Umeno, M ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001249850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126171     Document Type: Article

References (11)

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