Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxy

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 419-427

  Brandt, O ^a   Muralidharan, R ^a   Thamm, A ^a   Waltereit, P ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDES; INDIUM GALLIUM NITRIDES;

HETEROJUNCTIONS;

EID: 0035873301     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00090-3     Document Type: Article

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