Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 41, Issue 4, 2005, Pages 568-572

  Duan, Ning ^a   Wang, S ^a   Zheng, X G ^b   Li, X ^a   Li, Ning ^a   Campbell, Joe C ^a   Wang, Chad ^c   Coldren, Larry A ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b JDS UNIPHASE   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Avalanche photodiodes (APDs); Excess noise factor; Impact ionization; Photodetectors

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; ELECTRIC FIELD EFFECTS; FREQUENCY RESPONSE; IMPACT IONIZATION; OPTIMIZATION; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES (APDS); EXCESS NOISE FACTOR;

PHOTODIODES;

EID: 17644367504     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.843613     Document Type: Article

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