Long-wavelength In0.53 Ga0.47As-In0.52 Al0.48As large-area avalanche photodiodes and arrays

IEEE Journal of Quantum Electronics

Volumn 40, Issue 8, 2004, Pages 1068-1073

  Zheng, X G ^a   Hsu, J S ^a   Hurst, J B ^a   Li, X ^a   Wang, S ^a   Sun, X ^a   Holmes Jr , Archie L ^a   Campbell, Joe C ^a   Huntington, Andrew S ^b   Coldren, Larry A ^b  

^a The University of Texas at Austin   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; AVALANCHE DIODES; BANDWIDTH; CAPACITANCE; CURRENT DENSITY; ELECTRIC BREAKDOWN; ETCHING; IMPACT IONIZATION; LEAKAGE CURRENTS; PASSIVATION; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AVALANCHE MULTIPLICATION; AVALANCHE PHOTODIODES; CAPACITANCE VOLTAGE CHARACTERISTIC; DARK CURRENT; EXCESS NOISE FACTOR; IONIZATION COEFFICIENT; WET ETCHING;

PHOTODIODES;

EID: 3943051392     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.831637     Document Type: Article

References (14)

1. R. S. Balcerak, "Unattended imaging sensors," in Proc. 3-D Imaging Receivers SPIE Conf., Apr. 2000, pp. 11-14.
2. G. S. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode with a gain-bandwidth product of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, pp. 842-844, Aug. 2001.
3. H. S. Kim, J. H. Choi, H. M. Bang, Y. Jee, S. W. Yun, J. Burm, M. D. Kim, and A. G. Choo, "Dark current reduction in APD with BCB passivation," Electron. Lett., vol. 37, no. 7, pp. 455-457, Mar. 2001.
4. 3F/HF etch a BCB passivation layer," in Proc. Indium Phosphide and Related Materials Conf., pp. 302-305.
5. M. Hayashi, I. Wantababe, T. Nakata, M. Tsuji, K. Makita, S. Yamakata, and K. Taguchi, "Microlens-integrated large-area InAlGaAs-InAlAs superlattice APDs for eye-safety 1.5-μm wavelength optical measurement use," IEEE Photon. Technol. Lett., vol. 10, pp. 576-578, Apr. 1998.
6. I. Watanabe, M. Tsuji, M. Hayashi, K. Makita, and K. Taguchi, "Design and performance of InAlGaAs-InAlAs superlattice avalanche photodiodes," J. Lightwave Technol., vol. 15, pp. 1012-1019, June 1997.
7. C. Cohen-Jonathan, L. Giraudet, A. Bonzo, and J. P. Praseuth, "Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz," Electron. Lett., vol. 33, no. 17, pp. 1492-1493, 1997.
8. H. Nie, K. A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B. G. Streetman, and J. C. Campbell, "Resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes with high speed and high gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 10, pp. 409-411, Mar. 1998.
9. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A. L. Holmes Jr., B. G. Streetman, and J. C. Campbell, "Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz," IEEE Photon. Technol. Lett., vol. 11, pp. 1162-1164, Sept. 1999.
10. K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, July 1999.
11. 0.48As avalanche photodiode array," IEEE J. Quantum Electron., vol. 38, pp. 1536-1540, Nov. 2002.
12. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Holmes Jr., and B. G. Streetman, "Thin multiplication region InAlAs homojunction avalanche photodiodes," Appl. Phys. Lett., vol. 73, no. 6, pp. 783-784, 1998.
13. T. Kagawa, Y. Kawamura, and H. Iwamura, "A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelength of 1.3 μm and 1.55 μm," IEEE J. Quantum Electron., vol. 29, pp. 1387-1392, May 1993.
14. K. Makita, I. Watanabe, M. Tsuji, and K. Taguchi, "Dark current and breakdown analysis in In(Al)GaAs/InAlAs superlattice avalanche photodiodes," Jpn. J. Appl. Phys., vol. 35, pp. 3440-3444, 1996.