High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 161-163

  Nie, Hui ^a   Anselm, K A ^a   Hu, C ^a   Murtaza, S S ^a   Streetman, B G ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; FABRICATION; FREQUENCY RESPONSE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIDE; AVALANCHE PHOTODIODES; GAIN BANDWIDTH PRODUCT; INDIUM GALLIUM ARSENIDE; MULTIPLICATION NOISE; SEPARATE ABSORPTION AND MULTIPLICATION;

PHOTODIODES;

EID: 0030781548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118341     Document Type: Article

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