Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2348-2354

  Brusa, R S ^a   Spagolla, M ^a   Karwasz, G P ^a   Zecca, A ^a   Ottaviani, G ^b   Corni, F ^b   Bacchetta, M ^c   Carollo, E ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTAMINATION; DOPPLER EFFECT; HYDROGEN; MICROPOROSITY; NITROGEN; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

NANOSCALE PORES; POSITRON BEAMS;

DIELECTRIC FILMS;

EID: 1642335585     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644925     Document Type: Article

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