Hydrogen determination in Si-rich oxide thin films

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 109-114

  Monelli, A ^a   Corni, F ^a   Tonini, R ^a   Ferrari, C ^a,c   Ottaviani, G ^a   Zanotti, L ^b   Queirolo, G ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c ITIS Fermo Corni   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000408692     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362766     Document Type: Article

References (14)

1. Semiconductor Materials and Process Technology Handbook for VLSI and ULSI, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988).
2. F. H. P. M. Habraken and A. E. T. Kuiper, Mater. Sci. Eng. R12, 123 (1994).
3. H. J. Stein, Appl. Phys. Lett. 32, 379 (1978).
4. C. M. M. Denisse, K. Z. Troost, F. H. P. M. Habraken, and W. F. van der Weg, J. Appl. Phys. 60, 2543 (1986).
5. C. M. M. Denisse, J. F. M. Janssen, F. H. P. M. Habraken, and W. F. van der Weg, Appl. Phys. Lett. 52, 1308 (1988).
6. W. A. P. Claassen, H. A. J. Th. van der Pol, A. H. Goemans, and A. E. T. Kuiper, J. Electrochem. Soc. 133, 1458 (1986).
7. Handbook of Modern Ion Beam Materials Analysis, edited by J. R. Tesmer and M. Nastasi (Materials Reasearch Society, Pittsburgh, PA, 1995).
8. W. K. Chu, J. W. Mayer, and M. A. Nicolet, Backscattering Spectrometry, (Academic, New York, 1978).
9. M. Berti and A. V. Drigo, Nucl. Instrum. Methods 201, 473 (1982).
10. J. F. Ziegler, J. P. Biersack, and U. Littmark, Stopping Power and Ranges of Ions in Matter (Pergamon, New York, 1995), Vol. 1.
11. L. R. Doolittle, Nucl. Instrum. Methods B 9, 334 (1985).
12. B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S. M. M. Ramos, F. Studer, P. Thevenard, and M. Toulemonde, Phys. Rev. B 51, 12194 (1995).
13. M. Toulemonde, C. Dufour, and E. Paumier, Phys. Rev. B 46, 14362 (1992).
14. A. Borghesi (private communication).