Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams

Applied Surface Science

Volumn 150, Issue 1, 1999, Pages 202-210

  Brusa, R S ^a   Somoza, A ^b   Huck, H ^c   Tiengo, N ^a   Karwasz, G P ^a   Zecca, A ^a   Reinoso, M ^c   Halac, E B ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSIDAD NACIONAL DEL CENTRO DE LA PROVINCIA DE BUENOS AIRES   (Argentina)

^c Depto de Fisica   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL DEFECTS; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON ENERGY LEVELS; GRAPHITIZATION; ION BEAMS; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICON WAFERS; TEMPERATURE;

ELECTRICAL RESISTIVITY MEASUREMENT; HARD AMORPHOUS CARBON FILMS; HIGH ENERGY ION BEAMS; MICROSTRUCTURAL ANALYSIS; POSITRON ANNIHILATION SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 0033337120     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00246-9     Document Type: Article

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