New types of defects in SiC grown by the PVT method

Journal of Physics Condensed Matter

Volumn 17, Issue 10, 2005, Pages

  Zhu, L N ^a   Li, Heqing ^a   Hu, B Q ^a   Wu, X ^a   Chen, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; ETCHING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE APPLICATIONS; OPTICAL MICROSCOPY; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THERMAL CONDUCTIVITY; TRANSPORT PROPERTIES;

ELECTRON SATURATION DRIFT VELOCITY; ETCHING PITS; PHYSICAL VAPOR TRANSPORT (VPT); POLYTYPIC INTERFACES;

SILICON CARBIDE;

EID: 15744364214     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/10/L01     Document Type: Article

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