Growth related distribution of secondary phase inclusions in 6H-SiC single crystals

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 29-32

  Rost, H J ^a   Dolle, J ^a   Doerschel, J ^a   Siche, D ^a   Schulz, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); ELECTRON ENERGY LOSS SPECTROSCOPY; OPTICAL MICROSCOPY; PARTICLES (PARTICULATE MATTER); PHASE COMPOSITION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS;

CARBON PARTICLES; PHASE BOUNDARY; SECONDARY PHASE INCLUSIONS;

SILICON CARBIDE;

EID: 0035129736     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.29     Document Type: Article

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