Defects in sublimation-grown SiC bulk crystals

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13009-13018

  Madar, Roland ^a   Pernot, Etienne ^a   Anikin, Mikael ^a   Pons, Michel ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; INGOTS; MORPHOLOGY; OPTICAL MICROSCOPY; PRESSURE;

POLARIZED LIGHT MICROSCOPY; THERMAL FIELD; X-RAY WHITE-BEAM SYNCHROTRON TOPOGRAPHY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037122087     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/345     Document Type: Article

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