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Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 48-53

Analysis on defect generation during the SiC bulk growth process

(6) Hofmann, D a Schmitt, E b Bickermann, M a Kolbl M b Wellmann, P J a Winnacker, A a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b SICRYSTAL AG (Germany)

Author keywords

Micropipe formation; Modeling of SiC sublimation growth; Physical vapor transport; SiC bulk crystal growth

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; SUBLIMATION; THERMAL GRADIENTS;

LELY METHOD; MICROPIPES; PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SILICON CARBIDE;

CRYSTAL;

EID: 0033618713 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00443-7 Document Type: Article

Times cited : (69)

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