Liquid phase silicon at the front of crystallization during SiC PVT growth

Journal of Crystal Growth

Volumn 233, Issue 3, 2001, Pages 541-547

  Drachev, R V ^a   Straty, G D ^a   Cherednichenko, D I ^a   Khlebnikov, I I ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

A1. defects; A2. growth from vapor; A2. seed crystals; A2. single crystal growth

Indexed keywords

CRYSTAL DEFECTS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS; THERMODYNAMICS;

SEED CRYSTALS;

CRYSTAL GROWTH;

EID: 0035546583     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01604-9     Document Type: Article

References (19)