Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 176-178

  Vorob'ev, A N ^a   Komissarov, A E ^a   Segal, A S ^a   Makarov, Yu N ^b   Karpov, S Yu ^c   Zhmakin, A I ^d   Rupp, R ^e  

^a ITMO UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c SOFT IMPACT LTD   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

^e SIEMENS AG   (Germany)

Author keywords

CVD; Gas phase; Nucleation; SiC

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; MATHEMATICAL MODELS; NUCLEATION; PROPANE; ROTATING DISKS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

ROTATING DISK REACTORS;

SILICON CARBIDE;

ANALYSIS; CHEMICAL; GAS; VAPOR DEPOSITION;

EID: 0033618692     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00497-8     Document Type: Article

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