Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide

Microelectronics Reliability

Volumn 41, Issue 5, 2001, Pages 745-749

  Cheung, Kin P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC DISCHARGES; ELECTROSTATICS; OXIDES; SEMICONDUCTING SILICON; SOLID STATE RECTIFIERS; STRESS ANALYSIS; TRANSIENTS; ULTRATHIN FILMS;

ELECTROSTATIC DISCHARGES (ESD); ULTRA-THIN GATE OXIDES;

MICROELECTRONICS;

EID: 0035340705     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00011-7     Document Type: Article

References (9)

1. Analysis of Snapback Behavior on the ESD Capability of Sub-0.20 μm NMOS
2. Plasma charging damage and ESD, help each other?
3. ESD protection in deep submicron CMOS technology - Does the transient matter?
4. Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions
5. Reliability Projection for Ultra-Thin Oxides at Low Voltage
6. Ultra-thin oxide reliability for ULSI application
7. Challenges for Accurate Reliability Projections in the Ultra-Thin Oxide Regime
8. New Insights in the Relation Between Electron Trap Generation and the Statistical Properties of Oxide Breakdown
9. Field Acceleration for Oxide Breakdown - Can an Accurate Anode Hole Injection Model Resolve the E vs 1/E Controversy?